2SK1155, 2SK1156
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
2,000
1,000
500
200
100
50
0.1
10
0
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
1,000
Coss
100
Crss
0.5 1.0
0.2
2
5
Reverse Drain Current I
DR
(A)
10
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
V
DD
= 100 V
250 V
400
V
DS
400 V
16
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
V
GS
= 10 V
PW = 2
µs,
duty < 1%
Switching Time t (ns)
200
100
t
d (off)
50
t
f
20
10
5
0.1
t
r
t
d (on)
300
V
GS
200
I
D
= 5 A
100
V
DD
= 400 V
250 V
100 V
8
24
32
16
Gate Charge Qg (nc)
12
8
4
0
0
40
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
10
5
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