2SK1153, 2SK1154
Body to Drain Diode Reverse
Recovery Time
1,000
Reverse Recovery Time t
rr
(ns)
500
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1,000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
200
100
50
100
Coss
10
Crss
20
10
0.05
1
0
10
20
30
40
Drain to Source Voltage V
DS
(V)
50
0.1 0.2
0.5 1.0
2
Reverse Drain Current I
DR
(A)
5
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
V
DD
= 100 V
250 V
400
V
DS
400 V
16
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
V
GS
= 10 V
PW = 2µs, duty < 1%
200
Switching Time t (ns)
100
50
300
V
GS
200
V
DD
= 400 V
250 V
100 V
4
I
D
= 3 A
12
8
t
d (off)
t
f
t
r
t
d (on)
0.1
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
20
10
5
0.05
100
4
0
8
12
16
Gate Charge Qg (nc)
0
20
5