2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S
Body to Drain Diode Reverse
Recovery Time
1,000
Reverse Recovery Time t
rr
(ns)
500
di/dt = 100A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1,000
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
100
Coss
10
200
100
50
20
10
0.05
1
0.1 0.2
0.5 1.0
2
Reverse Drain Current I
DR
(A)
5
0
Capacitance C (pF)
Crss
10
20
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
500
100 V
Drain to Source Voltage V
DS
(V)
250 V
400
V
DS
400 V
16
Gate to Source Voltage V
GS
(V)
50
Switching Time t (ns)
20
100
Switching Characteristics
V
GS
= 10 V
PW = 2
µs,
duty < 1%
t
d (off)
20
t
f
10
5
t
d (on)
t
r
2
1
0.05
300
V
GS
200
V
DD
= 400 V
250 V
100 V
2
I
D
= 1.5 A
12
8
100
4
0
4
6
8
Gate Charge Qg (nc)
0
10
0.1
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
5