2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
TO–3P
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and
2SJ162
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
3
1
2
3
1
1. Gate
2. Source
(Flange)
3. Drain
2
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1056
Symbol
V
DSX
Ratings
120
Unit
V
———————————————————————————————————————————
—————
2SK1057
———
140
—————
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
V
GSS
———
160
±15
7
7
100
150
–55 to +150
V
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch*
Tch
Tstg
I
DR
I
D
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
Value at T
C
= 25 °C
1
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