2SK975
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t
rr
(ns)
500
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Capacitance C (pF)
1000
300
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
100
30
Crss
10
3
1
Coss
200
100
50
20
10
0.05
0.1 0.2
0.5 1.0
2
Reverse Drain Current I
DR
(A)
5
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
V
DD
= 50 V
25 V
10 V
60
V
DS
V
DD
= 50 V
V
GS
12
20
Gate to Source Voltage V
GS
(V)
16
100
Switching Characteristics
t
d (off)
50
Switching Time t (ns)
t
f
20
10
5
t
d (on)
2
1
0.05
V
GS
= 10 V
PW = 2
µs,
duty < 1 %
t
r
40
20
8
4
25 V
10 V
0
2
I
D
= 1.5 A
4
6
8
Gate Charge Qg (nc)
0
10
0.1
0.5 1.0
2
Drain Current I
D
(A)
0.2
5
5