2SK974 L , 2SK974 S
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10000
3000
Capacitance C (pF)
1000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
200
100
50
Ciss
300
100
Crss
30
10
Coss
20
10
5
0.2
0.5 1.0
2
5
10
Reverse Drain Current I
DR
(A)
20
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
20
Gate to Source Voltage V
GS
(V)
16
500
Switching Characteristics
t
d (off)
200
Switching Time t (ns)
100
t
f
V
DD
= 50 V
25 V
10 V
60
V
DS
40
20
25 V
10 V
0
4
8
V
DD
= 50 V
12
V
GS
I
D
= 3 A
8
4
50 V
GS
= 10 V
PW = 2
µs,
duty < 1 %
20
10
5
0.1
t
r
16
Gate Charge Qg (nc)
12
0
20
t
d (on)
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
10
5