2SK972
Body to Diode Reverse
Recovery Time
1,000
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Capacitance C (pF)
10,000
3,000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
1,000
Coss
300
Crss
100
30
10
500
200
100
50
20
10
0.5
2
1.0
5
10
20
Reverse Drain Current I
DR
(A)
50
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
V
DD
= 50 V
80
25 V
10 V
60
V
DS
40
20
V
DD
= 50 V
25 V
10 V
V
GS
12
16
20
Gate to Source Voltage V
GS
(V)
1000
500
Switching Time t (ns)
Switching Characteristics
t
d (off)
t
f
200
100
t
r
50
20
10
0.5
8
4
I
D
= 25 A
0
100
V
GS
= 10 V
PW = 2µs, duty < 1 %
t
d (on)
1.0
10
20
Drain Current I
D
(A)
2
5
50
0
20
40
60
80
Gate Charge Qg (nc)
5
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