2SK971
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t
rr
(ns)
500
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Capacitance C (pF)
10000
3000
1000
300
100
30
10
2
1.0
5
10
20
Reverse Drain Current I
DR
(A)
50
0
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1MHz
200
100
50
Ciss
Coss
Crss
20
10
0.5
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
20
Gate to Source Voltage V
GS
(V)
16
500
Switching Characteristics
V
DD
= 50 V
25 V
10 V
Switching Time t (ns)
200
100
50
t
d (off)
t
f
60
V
DS
12
40
20
V
GS
V
DD
= 50 V
I
D
= 15 A
25 V
10 V
8
16
24
32
Gate Charge Qg (nc)
8
4
t
r
20
10
5
0.2
V
GS
= 10 V
PW = 2µs, duty < 1 %
t
d (on)
0
0
40
0.5
10
1.0
5
2
Drain Current I
D
(A)
20
5
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