2SK970
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
200
100
50
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Capacitance C (pF)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f =1MHz
Ciss
300
Coss
100
Crss
30
10
20
10
5
0.5
1.0
2
5
10
20
Reverse Drain Current I
DR
(A)
50
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
20
Gate to Source Voltage V
GS
(V)
16
500
200
100
50
20
Switching Characteristics
t
d (off)
60
V
DD
= 50 V
25 V
10 V
V
DS
V
DD
= 50 V
V
GS
I
D
= 10 A
Switching Time t (ns)
12
t
f
V
GS
= 10 V
PW = 2
µs,
duty < 1 %
t
r
40
20
8
4
25 V
10 V
0
4
10
5
0.1
t
d (on)
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
10
8
12
16
Gate Charge Qg (nc)
0
20
5
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