2SK741
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance
vs.Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
2,000
1,000
500
1,000
Ciss
Coss
100
200
100
50
0.5
Crss
10
1.0
2
5
10
20
Reverse Drain Current I
DR
(A)
50
0
10
20
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
V
GS
= 10 V
PW = 2µs, duty
<
1 %
t
d (off)
t
f
t
r
20
t
d (on)
10
5
0.2
300
V
DS
100 V
50 V
V
GS
Switching Time t (ns)
400
V
DD
= 200 V
16
200
100
50
12
200
8
100
V
DD
= 200 V
100 V
50 V
8
I
D
= 7 A
4
0
16
24
32
Gate Charge Qg (nc)
0
40
0.5 1.0 2
5
10
Drain Current I
D
(A)
20
5
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