2SK740
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
10,000
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
1,000
Coss
200
100
50
di/dt = 50 A/µs
V
GS
= 0
Ta = 25°C
Pulse Test
Capacitance C (pF)
20
10
5
0.5
100
Crss
10
1.0
2
5
10
20
Reverse Drain Current I
DR
(A)
50
0
10
20
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
200
Drain to Source Voltage V
DS
(V)
20
Gate to Source Voltage V
GS
(V)
V
DD
= 100 V
50 V
120
25 V
V
DS
V
GS
12
Switching Characteristics
500
V
GS
= 10 V
PW = 2µs, duty
<
1 %
t
r
100
50
t
f
t
d (on)
t
d (off)
80
8
Switching Time t (ns)
160
16
200
20
10
5
0.2
40
V
DD
= 100 V
50 V
25 V
8
I
D
= 10 A
4
0
16
24
32
Gate Charge Qg (nc)
0
40
0.5 1.0 2
5
10
Drain Current I
D
(A)
20
5