2SK740
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
150
Typ
Max
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V *
I
D
= 5 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
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±20
V
———————————————————————————————————————————
2.0
0.12
±10
250
4.0
0.15
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
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4.0
7.0
1200
550
85
20
50
70
40
1.2
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
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220
ns
———————————————————————————————————————————
2
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