2SK740
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC
converter and motor driver
2
1
2
3
1
1. Gate
2. Drain
(Flange)
3. Source
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
Tstg
Ratings
150
±20
10
40
10
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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*
PW
≤
10 µs, duty cycle
≤
1 %
**
Value at T
C
= 25 °C
1