2SJ451
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Foward transfer admittance
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
Min
–20
Typ
Max
Unit
V
Test conditions
I
D
= –100 µA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
DS
= –16 V, V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
V
———————————————————————————————————————————
–0.5
2.3
–1.0
±2.0
–1.5
3.5
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)1
R
DS(on)2
|yfs|
Ciss
Coss
Crss
td(
on)
V
GS(off)
I
D
= –10 µA, VDS = –5 V
I
D
= –100 mA
V
GS
= –4 V *
I
GSS
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————
5.0
9.0
———————————————————————————————————————————
0.13
0.23
S
I
D
= –40 mA
V
GS
= –2.5 V *
I
D
= –100 mA
V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
* Pulse Test
2.4
31
0.6
0.17
0.68
3.0
2.8
pF
pF
pF
µs
µs
µs
µs
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
t
f
t
d(off)
t
r
V
GS
= –10 V, I
D
= –0.1 A
R
L
= 100
2
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