2SJ450
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Fowerd transfer admittance
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
Min
–60
Typ
—
Max
—
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
—
—
V
———————————————————————————————————————————
—
—
–0.5
—
—
—
—
0.85
–50
±10
–1.5
1.2
µA
µA
V
Ω
Ω
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)
R
DS(on)
|yfs|
Ciss
Coss
Crss
td(
on)
V
GS(off)
VDS = –10 V, I
D
= –1 mA
I
D
= –0.5 A
V
GS
= –4 V *
I
GSS
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————
—
1.1
1.9
———————————————————————————————————————————
0.6
1.0
—
S
I
D
= –0.3 A
V
GS
= –2.5 V *
I
D
= –0.5 A
V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
Marking is "UY".
—
—
—
—
—
—
—
—
150
72
24
6
9
50
35
–0.9
—
—
—
—
—
—
—
—
pF
pF
pF
µs
µs
µs
µs
V
I
F
= –1 A, V
GS
= 0
I
F
= –1 A, V
GS
= 0
diF / dt = 50A / µs
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
V
DF
trr
t
f
t
d(off)
t
r
V
GS
= –10 V, I
D
= –0.5 A
R
L
= 60
Ω
———————————————————————————————————————————
—
100
—
ns
———————————————————————————————————————————
2