2SJ450
Silicon P Channel MOS FET
1st. Edition
Jun. 1995
Application
High speed power switching
1
UPAK
Features
Low on-resistance.
Low drive power
High speed switching
2.5V gate drive device.
G
D
2
3
2
4
1
3
S
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
–60
±20
–1
–2
–1
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
100 µs, duty cycle
10 %
**
When using aluminium ceramic board (12.5 x 20 x 70 mm)
1
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