2SJ408 L , 2SJ408 S
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
100000
Capacitance C (pF)
30000
10000
3000
1000
V
GS
= 0
f = 1 MHz
200
100
50
Ciss
Coss
Crss
300
100
20
10
–1
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
–50 –100
–2
–5 –10 –20
Reverse Drain Current I
DR
(A)
0
–10
–20
–30
–40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
V
GS
(V)
0
0
5000
2000
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty < 1 %
Switching Time t (ns)
–20
–4
t d(off)
1000
500
tr
200
100
t d(on)
50
–1
–2
–5 –10 –20
–50 –100
Drain Current I
D
(A)
tf
Drain to Source Voltage
–40
V
DS
V
DD
= –50 V
–25 V
–10 V
V
GS
–8
–60
–12
–80
–100
0
–16
I
D
= –50 A
–20
200
400
600
800 1000
Gate Charge Qg (nc)
Gate to Source Voltage
5
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index