2SJ408 L , 2SJ408 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
–2.0
Static Drain to Source on State Resistance
vs. Drain Current
100
50
V
GS
= –4 V
–10 V
–1.6
20
10
5
Drain to Source Voltage
–1.2
I
D
= –50 A
–0.8
–0.4
–20 A
–10 A
2
1
–1
Pulse Test
–3
–10 –30 –100 –300 –1000
Drain Current I
D
(A)
0
–4
–2
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
I
D
= –50 A
V
GS
= –4 V
20
–10 A
–20 A
–50 A
–10 A
–20 A
Forward Transfer Admittance vs.
Drain Current
100
50
20
10
5
2
1
0.5
–0.1 –0.3
–1
–3
V
DS
= –10 V
Pulse Test
–10 –30
–100
Drain Current I
D
(A)
Tc = –25 °C
25 °C
75 °C
30
10
–10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
4
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