2SJ399
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R
DS(on)
(
)
–0.5
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Ta = 25 °C
50 Pulse Test
20
10
5
V
GS
= –4 V
2
1
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
–0.4
–0.3
–0.2 A
–0.2
–0.1 A
–0.1
I
D
= –0.05 A
–10 V
0
–4
–8
–12
Gate to Source Voltage
–16
–20
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
5
I
D
= –0.2 A
–0.05 A
–0.1 A
V
GS
= –4 V
I
D
= –0.2 A
2
V
GS
= –10 V
–0.1 A
–0.05 A
Forward Transfer Admittance vs.
Drain Current
1
0.5
Ta = –25 °C
0.2
0.1
25 °C
75 °C
4
3
0.05
0.02
0.01
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
1
0
–40
V
DS
= –10 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4
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