2SJ399
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
–30
Typ
Max
Unit
V
Test conditions
I
D
= –100
µA,
V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
V
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————
–1.0
2.7
±2
–1
–2.0
7.5
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)
V
GS(off)
I
D
= –10
µA,
VDS = –5 V
I
D
= –20 mA
V
GS
= –4 V *
V
DS
= –30 V, V
GS
= 0
————————————————————————
2.0
7
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Ciss
Coss
Crss
t
d(on)
1.1
22.3
0.17
530
2170
7640
7690
pF
pF
pF
ns
ns
ns
ns
I
D
= –10 mA
V
GS
= –10 V *
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –0.1 A
V
GS
= –10 V
R
L
= 100
PW = 5
µs
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
t
d(off)
t
r
———————————————————————————————————————————
2
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