2SJ399
Silicon P Channel MOS FET
Application
MPAK
Low frequency power switching
3
Features
•
•
•
•
Low on–resistance
Small package
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for low signal load switch.
D
G
1
2
1. Source
2. Gate
3. Drain
S
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
–30
±20
–0.2
–0.4
–0.2
150
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
≤
100 µs, duty cycle
≤
10 %
**
Marking is “ZF–”
1