2SJ389 L , 2SJ389 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
–1.0
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
-0.8
–0.6
I
D
= –5 A
0.5
0.2
-0.4
–2 A
–1 A
0
–4
–8
12
Gate to Source Voltage
–16
–20
V
GS
(V)
V
GS
= –4 V
–10 V
–2
–5 –10 –20
–50 –100
Drain Current I
D
(A)
–0.2
0.1
0.05
–1
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25 °C
5
25 °C
75 °C
V
DS
= –10 V
Pulse Test
0.3
–2, –1 A
I
D
= –5 A
V
GS
= –4 V
–5, –2, –1 A
–10 V
0.2
2
1
0.5
–0.1 –0.2
0.1
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
4