2SJ386
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
1000
500
Capacitance C (pF)
200
100
50
Dynamic Input Characteristics
V
DD
= –30 V
–20 V
–10 V
V
GS
(V)
Gate to Source Voltage
5
0
I
D
= –3 A
0
–10
–4
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
Drain to Source Voltage
–20
V
DD
= –30 V
–20 V
–10 V
V
GS
–8
–30
V
DS
–12
20
10
–40
–50
0
–16
–20
20
Drain to Source Voltage V
DS
(V)
4
8
12
16
Gate Charge Qg (nc)
Switching Characteristics
200
tf
t d(off)
20
10
5
2
V
GS
= –10 V, V
DD
= –30 V
PW = 2 µs, duty < 1 %
–0.5
–1
–2
–5
Reverse Drain Current vs.
Source to Drain Voltage
–5
Reverse Drain Current I
DR
(A)
Pulse Test
–4
100
Switching Time t (ns)
50
–3
tr
t d(on)
–10 V
–5 V
V
GS
= 0
–2
–1
–0.05 –0.1 –0.2
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain Current
I
D
(A)
Source to Drain Voltage
V
SD
(V)