2SJ386
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Ta = 25 °C
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
–5
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25 °C
5 Pulse Test
–4
2
1
V
GS
= –4 V
–10 V
–3
–2
I
D
= –5 A
–1
–3 A
–1 A
0
–4
–8
–12
Gate to Source Voltage
–16
–20
V
GS
(V)
0.5
0.2
0.1
–0.1 –0.2
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
I
D
= –3 A
0.8
V
GS
= –4 V
0.6
I
D
= –5 A
0.4
–3 A
0.2
0
–40
V
GS
= –10 V
–1 A
–1 A
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Forward Transfer Admittance vs.
Drain Current
10
5
Ta = –25 °C
2
25 °C
1
0.5
75 °C
0.2
0.1
–0.1 –0.2
V
DS
= –10 V
Pulse Test
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
0
40
80
Ambient Temperature
120
160
Ta (°C)
4