2SJ384 L , 2SJ384 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
g
V
DS(on)
(V)
Pulse Test
I
D
= –10 A
Drain to Source On State Resistance
R
DS(on)
(
)
–1.0
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
–0.8
0.2
0.1
–0.6
–5 A
V
GS
= –2.5 V
–4 V
–0.4
0.05
0.02
0.01
–0.5
–10 V
–0.2
–2 A
0
–2
–4
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
–1
–2
–5 –10 –20
Drain Current I
D
(A)
–50
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1
0.5
–0.1 –0.3
V
DS
= –10 V
Pulse Test
–1
–3
–10 –30
Drain Current I
D
(A)
–100
75 °C
Tc = –25 °C
25 °C
0.3
V
GS
= –2.5 V
I
D
= –10 A
–2 A
–5 A
0.2
0.1
–2, –5, –10 A
0
–40
–10 V
0
40
80
120
160
Case Temperature Tc (°C)
4
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index