2SJ363
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R
DS(on)
(
)
–1.0
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
3
1
V
GS
= –4 V
–10 V
–0.8
–2 A
–0.6
0.3
0.1
–0.4
-1 A
–0.2
I
D
= –0.5 A
0.03
0.01
–0.01 –0.03 –0.1 –0.3
Drain Current
0
–4
–8
–12
Gate to Source Voltage
–16
–20
V
GS
(V)
–1
–3
I
D
(A)
–10
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25 °C
2
1
0.5
V
DS
= –10 V
Pulse Test
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
25 °C
75 °C
1.2
I
D
= –2 A
0.8
V
GS
= –4 V
–1 A
–0.5 A
0.4
0
–40
V
GS
= –10 V
I
D
= –2 A
0.2
0.1
–0.1 –0.2
–1 A
–0.5 A
0
40
80
120
160
Case Temperature Tc (°C)
4
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