2SJ361
Body–Drain Diode Reverse
Recovery Time
3000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
300
100
30
10
Typical Capacitance vs.
Drain to Source Voltage
Coss
V
GS
= 0
f = 1 MHz
di/dt = 20 A/µs
V
GS
= 0, Ta = 25 °C
1000
Ciss
3
1
0.3
Crss
300
100
–0.1
0.1
–0.3
–1
Reverse Drain Current
–3
–10
I
DR
(A)
0
–4
–8
–12
–16
–20
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
0
V
DS
V
DD
= –10 V
–20 V
I
D
= –2 A
0
20
10
Switching Time t (
µ
s)
Switching Characteristics
t d(off)
tf
–20
–4
Drain to Source Voltage
–40
–8
Gate to Source Voltage
3
tr
1
t d(on)
0.3
V
GS
= –10 V
V
DD
= –10 V
PW = 30 µs
duty < 1 %
–60
V
GS
V
DD
= –10 V
–20 V
–12
–80
–16
–20
2.0
–100
0
0.4
0.8
1.2
1.6
Gate Charge Qg (nc)
0.1
–0.1
–0.3
–1
Drain Current
–3
I
D
(A)
–10
5
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