2SJ361
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
–0.5
Static Drain to Source on State Resistance
vs. Drain Current
5
3
Pulse Test
–0.4
I
D
= –1 A
–0.3
1
–2.5 V
–4 V
V
GS
= –10 V
–0.2
–0.5 A
–0.2 A
0.3
–0.1
0
–2
–4
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
0.1
–0.1
–0.3
–1
Drain Current
–3
I
D
(A)
–10
Static Drain to Source on State Resistance
R
DS(on)
(
)
Pulse Test
1.6
–1 A
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
2.0
1
Forward Transfer Admittance vs.
Drain Current
0.3
Tc = –25 °C
25 °C
75 °C
1.2
V
GS
= –2.5 V
–0.5 A
–0.2 A
0.1
0.8
–4 V
0.4
0
–40
–10 V
–1 A
–0.5 A
–0.2 A
–1 A
0.3
–0.5 A
I
D
= –0.2 A
V
DS
= –10 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
0.01
–0.1
–0.3
–1
–3
Drain Current I
D
(A)
–10
4
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