2SJ351, 2SJ352
Table 3 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SJ351
Symbol
V
(BR)DSX
Min
–180
–200
V
(BR)GSS
V
GS(off)
V
DS(sat)
|y
fs
|
Ciss
Coss
Crss
t
on
t
off
±20
Typ
—
—
—
Max
—
—
—
V
I
G
= ±100 µA, V
DS
= 0
I
D
= –100 mA
VDS = –10 V
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 10 V
———————————————————————————————————————————
————
2SJ352
Gate to source breakdown
voltage
Gate to source cutoff voltage
——————————
———————————————————————————————————————————
———————————————————————————————————————————
–0.15
—
–1.45
V
———————————————————————————————————————————
Drain to source saturation
voltage
Forward transfer admittance
—
—
–12
V
I
D
= –8 A, VGD = 0 V*
I
D
= –3 A
V
DS
= –10 V *
V
GS
= 5 V
V
DS
= –10 V
f = 1 MHz
V
DD
= –30 V
I
D
= –4 A
———————————————————————————————————————————
0.7
1.0
1.4
S
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on time
Turn–off time
* Pulse Test
—
—
—
—
—
800
1000
18
320
120
—
—
—
—
—
pF
pF
pF
ns
ns
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2