2SJ351, 2SJ352
Silicon P-Channel MOS FET
Application
TO–3P
Low frequency power amplifier
Complementary pair with 2SK2220
2SK2221
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement–mode
Good complementary characteristics
Equipped with gate protection diodes
3
1
1
2
3
1. Gate
2. Source
3. Drain
Table 1 Ordering Information
Type No.
2SJ351
2SJ352
2
————————————————————
–180 V
–200 V
V
DSS
————————————————————
————————————————————
Table 2 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SJ351
Symbol
V
DSX
Ratings
–180
Unit
V
———————————————————————————————————————————
————
2SJ352
Gate to source voltage
Drain current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
V
GSS
———
–200
±20
–8
–8
100
150
–55 to +150
V
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch*
Tch
Tstg
I
DR
I
D
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
Value at Tc = 25 °C
1
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