2SJ351, 2SJ352
Silicon P-Channel MOS FET
Application
TO–3P
Low frequency power amplifier
Complementary pair with 2SK2220
2SK2221
Features
•
•
•
•
•
•
•
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement–mode
Good complementary characteristics
Equipped with gate protection diodes
3
1
1
2
3
1. Gate
2. Source
3. Drain
Table 1 Ordering Information
Type No.
2SJ351
2SJ352
2
————————————————————
–180 V
–200 V
V
DSS
————————————————————
————————————————————
Table 2 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SJ351
Symbol
V
DSX
Ratings
–180
Unit
V
———————————————————————————————————————————
————
2SJ352
Gate to source voltage
Drain current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
V
GSS
———
–200
±20
–8
–8
100
150
–55 to +150
V
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch*
Tch
Tstg
I
DR
I
D
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
Value at Tc = 25 °C
1