2SJ350
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
1000
500
200
100
50
20
10
0
V
GS
= 0
f = 1 MHz
–10
–20
–30
-40
–50
Drain to Source Voltage V
DS
(V)
Crss
Coss
Ciss
200
100
50
20
di / dt = 50 A / µs, V
GS
= 0
Ta = 25 °C, Pulse Test
10
–5 –10
–0.1 –0.2 –0.5 –1 –2
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –25 V
–50 V
–80 V
V
GS
(V)
0
0
Switching Characteristics
500
200
100
50
20
10
5
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
–10
V
GS
= –10 V, V
DD
= –30 V
PW = 2 µs, duty < 1 %
t d(off)
I
D
= –6 A
Drain to Source Voltage
–80
V
DS
–8
V
DD
= –25 V
–50 V
–80 V
Gate to Source Voltage
Switching Time t (ns)
–40
–4
tf
tr
t d(on)
–120
–12
–160
V
GS
–16
–20
100
–200
0
20
40
60
80
Gate Charge Qg (nc)
Drain Current
I
D
(A)
5
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