2SJ333 L , 2SJ333 S
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
10000
200
100
50
V
GS
= 0
f = 1 MHz
3000
1000
Ciss
Coss
20
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
300
Crss
100
5
–0.1 –0.2
–0.5 –1.0 –2
–5 –10
Reverse Drain Current I
DR
(A)
0
–10
–20
–30
-40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –25 V
–10 V
–4
V
DS
–40
V
DD
= –25 V
–10 V
V
GS
(V)
0
0
Switching Characteristics
500
200
100
50
20
10
5
–0.1 –0.2
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
Drain to Source Voltage
–8
–60
I
D
= –7 A
–80
V
GS
–12
–16
–20
–40
–100
0
–8
–16
–24
–32
Gate Charge Qg (nc)
Gate to Source Voltage
Switching Time t (ns)
–20
5
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