2SJ333 L , 2SJ333 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
–1.0
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
5
2
1
0.5
Pulse Test
–0.8
–0.6
I
D
= –5 A
–0.4
–2 A
–1 A
0
–4
–8
12
Gate to Source Voltage
–16
–20
V
GS
(V)
0.2
0.1
V
GS
= –4 V
–10 V
–0.2
0.05
–0.1 –0.3
–1
–3
–10 –30
Drain Current I
D
(A)
–100
Static Drain to Source on State Resistance
R
DS(on)
(
)
Pulse Test
0.32
I
D
= –5 A
V
GS
= –4 V
0.16
–1 A
–2 A
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.40
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
Tc = 25 °C
75 °C
2
1
0.5
–10
V
DS
= –10 V
Pulse Test
–25 °C
0.24
0.08
0
–40
V
GS
= –10 V
I
D
= –1 A
–2 A
–5 A
0
40
80
120
160
Case Temperature Tc (°C)
–0.2 –0.5 –1 –2
–5
Drain Current I
D
(A)
–10
4
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