2SJ332 L , 2SJ332 S
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
10000
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
200
100
50
di / dt = 20 A / µs
V
GS
= 0, Pulse Test
1000
Ciss
Coss
Crss
20
10
100
5
–0.1 –0.2
–0.5 –1.0 –2
–5 –10
Reverse Drain Current I
DR
(A)
V
GS
= 0
f = 1 MHz
10
0
–4
–8
–12
–16
–20
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
GS
(V)
0
V
DS
(V)
V
DD
= –5 V
–10 V
–20 V
V
DS
0
500
200
100
50
20
10
tf
Switching Characteristics
V
GS
= –10 V, V
DD
= –10 V
PW = 2 µs, duty < 1 %
Drain to Source Voltage
Gate to Source Voltage
Switching Time t (ns)
–10
–4
–20
V
DD
= –5 V
–10 V
–20 V
V
GS
–8
t d(off)
tr
–30
–12
t d(on)
–40
I
D
= –10 A
–50
0
8
16
24
32
Gate Charge Qg (nc)
–16
–20
40
5
–0.1 –0.2
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
5
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