2SJ332 L , 2SJ332 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Pulse Test
–0.8
I
D
= –10 A
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
–1.0
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
V
GS
= –4 V
–10 V
Pulse Test
Drain to Source Voltage
–0.6
–0.4
–5 A
–2 A
0.05
–0.2
0.02
0.01
–0.5 –1
0
–2
–4
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
–2
–5 –10 –20
Drain Current I
D
(A)
–50
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
0.16
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
I
D
= –10 A
–5 A
V
GS
= –4 V
–10 A
–5 A
–2 A
Forward Transfer Admittance vs.
Drain Current
50
20
–25 °C
10
5
Tc = 25 °C
0.12
–2 A
0.08
75 °C
2
1
0.5
–0.2
V
DS
= –10 V
Pulse Test
–0.5 –1 –2
–5 –10 –20
Drain Current I
D
(A)
0.04
V
GS
= –10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
4