2SJ321
Silicon P Channel MOS FET
Application
TO–220CFM
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
2
12
3
1
1. Gate
2. Drain
3. Source
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
–60
±20
–15
–60
–15
–15
19
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
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Pch**
Tch
Tstg
E
AR
***
I
AP
***
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
***
Value at Tch = 25 °C, Rg
50
1
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