2SJ319 L , 2SJ319 S
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
Ciss
200
100
50
20
10
5
0
–10
–20
Crss
V
GS
= 0
f = 1 MHz
Coss
200
100
50
20
10
5
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
di/dt = 50 A/µs, V
GS
= 0
duty < 1 %, Ta = 25 °C
–30
-40
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –50 V
–100 V
–150 V
V
DS
V
DD
= –50 V
–100 V
–150 V
V
GS
(V)
0
0
Switching Characteristics
500
200
100
50
20
10
5
–0.05 –0.1 –0.2
–0.5
–1
–2
–5 –10
Drain to Source Voltage
–200
–8
Gate to Source Voltage
Switching Time t (ns)
–100
–4
V
GS
= –10 V, V
DD
= –30 V
duty < 1 %, PW = 2 µs
t d(off)
tf
tr
t d(on)
–300
–12
–400
V
GS
I
D
= –3A
4
8
12
16
Gate Charge Qg (nc)
–16
–20
–500
0
20
Drain Current
I
D
(A)
5