2SJ319 L , 2SJ319 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
)
–20
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
10
5
V
GS
= –10 V
Pulse Test
–16
2
1
0.5
0.2
0.1
–0.2
–12
I
D
= –5 A
–8
–2 A
–1 A
0
–4
–8
12
Gate to Source Voltage
–16
–20
V
GS
(V)
–4
–0.5
–1
–2
–5
Drain Current I
D
(A)
–10
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
5
Forward Transfer Admittance vs.
Drain Current
3
2
Tc = –25 °C
1
25 °C
75 °C
4
–2 A
I
D
= –5 A
–1 A
3
0.5
2
1
0
–40
V
GS
= –10 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.1
V
DS
= –10 V
Pulse Test
–0.5
–1
–2
–5
–10
–0.05 –0.1 –0.2
Drain Current I
D
(A)
4
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