2SJ318 L , 2SJ318 S
Body–Drain Diode Reverse Recovery Time
t rr (ns)
Body–Drain Diode Reverse
Recovery Time
2000
1000
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
200
100
Ciss
500
Coss
200
100
50
20
10
V
GS
= 0
f = 1MHz
0
–4
–8
–12
–16
–20
Drain to Source Voltage V
DS
(V)
Crss
50
20
di / dt = 20 A / µs
V
GS
= 0
Ta = 25 °C
–0.5
–1
–2
–5
–10
10
–0.1 –0.2
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
0
0
Switching Characteristics
500
Gate to Source Voltage V
GS
(V)
V
GS
= –10 V, V
DD
= –10 V
PW = 2 µs, duty < 1 %
Switching Time t (ns)
200
100
50
20
t d(on)
10
5
–0.05 –0.1 –0.2
–0.5 –1
–2
–5
–10
Drain to Source Voltage V
DS
(V)
–10
V
DD
= –5 V
–10 V
–20 V
V
GS
I
D
= –5 A
V
DD
= –5 V
–10 V
–20 V
–4
–20
V
DS
–8
tf
t d(off)
tr
–30
–12
–40
–16
–50
–20
0
8
16
24
32
Gate Charge Qg (nc)
40
Drain Current I
D
(A)
5
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