2SJ318 L , 2SJ318 S
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
R
DS(on)
(Ω)
–1.0
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pusle Test
0.2
0.1
V
GS
= –10 V
0.05
Pulse Test
–0.8
V
GS
= –4 V
–0.6
I
D
= –5 A
–0.4
–0.2
–2 A
–1 A
0.02
0.01
–0.1 –0.2 –0.5 –1
–2
–5 –10 –20 –50
0
–4
–8
–12
–16
–20
Gain to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.4
Foeward Transfer Admittance vs.
Drain Current
20
10
V
DS
= –10 V
Pulse Test
Static Drain to Source on State
Resistance R
DS(on)
(Ω)
Pulse Test
0.32
I
D
= –5 A
–2 A
–1 A
0.24
5
Tc = 75 °C
25 °C
–25 °C
0.16
V
GS
= –4 V
V
GS
= –10 V
2
1
0.5
–0.1 –0.2
0.08
–5 A
–2 A
–1 A
0
–40
0
40
80
120
160
–0.5
–1
–2
–5
–10
Case Temperature Tc (°C)
Drain Current I
D
(A)
4