2SJ317
Reverse Recovery Time vs.
Reverse Drain Current
2000
Reverse Recovery Time trr (ns)
1000
500
Switching Time vs. Drain Current
2000
1000
t (ns)
td(off)
500
tr
tf
Switching Time
200
100
50
di/dt = –10 A/µs
V
GS
= 0
V
GS
= –4 V
200 V
DD
= –10 V
PW = 5 µs
Duty cycle = 1 %
100
td(on)
20
–0.1 –0.2
–0.5 –1.0 –2
–5 –10
Reverse Drain Current I
DR
(A)
50
–0.05 –0.1 –0.2
–0.5 –1 –2
Drain Current I
D
(A)
–5
Dynamic Input Characteristics
–25
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
V
DD
= –10 V
I
D
= –2 A
–20 Pulse test
–15
V
GS
–10
1000
C (pF)
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
–8
Coss
–6
–10
–4
Typical Capacitance
Ciss
Crss
–5
V
DS
0
2
4
Gate Charge
6
8
Qg (nc)
–2
0
10
20
10
–0.1 –0.2 –0.5 –1.0 –2
–5 –10
Drain to Source Voltage V
DS
(V)
5
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index