2SJ317
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y
fs
| (S)
V
DS
= –5 V
Pulse test
Drain to Source On State Resistance
R
DS(on)
(
)
20
10
5
Ta = –25°C
2
1
0.5
0.2
–0.1 –0.2
75°C
25°C
10
Drain to Source on State Resistance
vs. Drain Current
Pulse test
5
2
V
GS
= –2 V
1
–3 V
0.5
0.2
0.1
–0.1 –0.2
–4 V
–0.5 –1.0 –2
–5
Drain Current I
D
(A)
–10
–0.5 –1.0 –2
–5
Drain Current I
D
(A)
–10
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse test
Drain to Source on State Resistance
R
DS(on)
(
)
–0.5
1.0
Drain to Source on State Resintance
vs. Case Temperature
Pulse test
–0.4
I
D
= –1 A
–0.3
0.8
I
D
= –2 A
0.6
V
GS
= –2.5 V
0.4
I
D
= –2 A
–1 A, –0.5A
–1 A
–0.5 A
–0.2
–0.1 A
–0.1
–0.5 A
–0.2 A
0.2
0
–25
V
GS
= –4 V
0
–1
–2
–3
Gate to Source Voltage
–4
V
GS
(V)
–5
0
25
50
75
Case Temperature Tc (°C)
100
4
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