2SJ317
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source cutoff current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)1
R
DS(on)2
|y
fs
|
Ciss
Coss
Crss
t
on
t
off
Min
–12
Typ
Max
Unit
V
Test conditions
I
D
= –1 mA,
V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±7
V
———————————————————————————————————————————
±5
µA
I
G
= ±10 µA,
V
DS
= 0
———————————————————————————————————————————
Zero gate voltage drain current
–1
µA
V
GS
= ±6.5 V,
V
DS
= 0
———————————————————————————————————————————
Gate to source cutoff voltage
–0.4
–1.4
V
V
DS
= –8 V,
V
GS
= 0
———————————————————————————————————————————
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
0.4
0.7
ID = –100 µA,
V
DS
= –5 V
I
D
= –0.5 A*
V
GS
= –2.2 V
I
D
= –1 A*,
V
GS
= –4 V
I
D
= –1 A*,
V
DS
= –5 V
———————————————————————————————————————————
0.28
0.35
———————————————————————————————————————————
1.0
2.3
S
———————————————————————————————————————————
Input capcitance
Output capacitance
Reverse transfer capacitance
Turn–on time
Turn–off delay time
* Pulse test
63
180
23
500
2860
pF
pF
pF
ns
ns
I
D
= –0.2 A*,
Vin = –4 V,
R
L
= 51
—————————————————————————————————
—————————————————————————————————
V
DS
= –5 V,
V
GS
= 0,
f = 1 MHz
———————————————————————————————————————————
—————————————————————————————————
———————————————————————————————————————————
2
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