2SJ317
Silicon P Channel MOSFET
Application
UPAK
High speed power switching
Low voltage operation
32
1
Features
• Very low on–resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit,
power switch, solenoid drive and etc.
2, 4
4
1
1. Gate
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
–12
±7
±2
±4
2
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
* PW < 100 µs, duty cycle < 10 %
** Value on the alumina ceramic board (12.5 x 20 x 0.7 mm).
*** Marking is "NY".
1
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index