2SJ291
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
di/dt = 50 A/µs
V
GS
= 0, duty < 1 %
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
1000
Coss
Crss
100
V
GS
= 0
f = 1 MHz
1
200
100
50
20
10
–0.5
0
–1
–2
–5 –10 –20
–50
Reverse Drain Current I
DR
(A)
–10
–20
–30
-40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
I
D
= –20 A
–8
V
DS
V
DD
= –10 V
–25 V
–50 V
V
GS
V
GS
(V)
0
0
1000
500
Switching Time t (ns)
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
PW = 2 µs, duty < 1 %
t d(off)
–20
–4
Drain to Source Voltage
–40
Gate to Source Voltage
200
100
tr
50
t d(on)
20
10
–0.2
tf
–60
–12
–80
–16
–20
200
–100
0
40
80
120
160
Gate Charge Qg (nc)
–0.5 –1 –2
Drain Current
–10 –20
I
D
(A)
–5
5
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