2SJ291
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
–1.6
Drain to Source On State Resistance
R
DS(on)
(
)
–2.0
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
V
GS
= –4 V
–10 V
–1.2
–20 A
–0.8
–10 A
–0.4
I
D
= –5 A
0.05
0.02
0
–2
–4
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
0.01
–1
–2
–5 –10 –20
–50 –100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
Static Drain to Source on State Resistance
R
DS(on)
(
)
Pulse Test
0.16
Forward Transfer Admittance |y
fs
| (S)
0.2
50
Forward Transfer Admittance vs.
Drain Current
20
10
5
2
1
0.5
–0.2
Tc = –25 °C
25 °C
75 °C
0.12
I
D
= –20 A
V
GS
= –4 V
–5 A
–10 A
–5 A
–10 A
–20 A
0.08
0.04
–10 V
V
DS
= –10 V
Pulse Test
–0.5 –1
–2
–5 –10 –20
Drain Current I
D
(A)
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
4
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