2SJ291
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
–60
Typ
Max
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
V
———————————————————————————————————————————
–1.0
0.05
±10
–250
–2.25
0.065
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)
V
GS(off)
I
D
= –1 mA, VDS = –10 V
I
D
= –10 A
V
GS
= –10 V *
I
D
= –10 A
V
GS
= –4 V *
V
DS
= –50 V, V
GS
= 0
————————————————————————
0.07
0.095
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
10
16
S
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
2200
1000
300
25
130
320
210
–1.1
pF
pF
pF
ns
ns
ns
ns
V
I
F
= –20 A, V
GS
= 0
IF = –20 A, V
GS
= 0,
diF / dt = 50 A / µs
I
D
= –10 A
V
DS
= –10 V *
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –10 A
V
GS
= –10 V
R
L
= 3
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————
———————————————————————————————————————————
160
ns
———————————————————————————————————————————
2
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