2SJ280 L , 2SJ280 S
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t rr (ns)
200
C (pF)
100
50
20
10
5
–1
di/dt = 50 A/
µ
s, V
GS
= 0
Ta = 25°C
10000
Typical Capacitance
vs. Drain-Source Voltage
Ciss
1000
Coss
Crss
100
V
GS
= 0,
f = 1 MHz
Capacitance
–2
–5 –10 –20
–50 –100
Reverse Drain Current I
DR
(A)
10
0
–10
–20
–30
Drain to Source Voltage
–40
–50
V
DS
(V)
Dynamic Input Characteristics
0
Drain to Source Voltage V
DS
(V)
–20
–40
–60
–80
Gate to Source Voltage V
GS
(V)
V
DD
= –10 V
–25 V
–50 V
V
DS
V
DD
= –10 V
–25 V
–50 V
Switching Characteristics
0
–4
–8
–12
1000
t
d
(off)
Switching Time t (ns)
500
200
100
50
20
10
–0.5 –1
t
f
t
r
I
D
= –30 A
V
GS
–16
–20
200
t
d
(on)
V
GS
= –10 V, V
DD
=
–30 V
:
PW = 2
µ
s, duty
<
1%
=
–100
0
40
80
120
160
Gate Charge Qg (nc)
–2
–5 –10 –20
Drain Current I
D
(A)
–50
5