2SJ278
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
di/dt = 50 A/µs
V
GS
= 0, duty < 1 %
Typical Capacitance vs.
Drain to Source Voltage
1000
200
100
50
Ciss
100
Coss
Crss
10
V
GS
= 0
f = 1 MHz
1
0
–10
–20
–30
-40
–50
Drain to Source Voltage V
DS
(V)
20
10
5
–0.02 –0.05 –0.1 –0.2 –0.5 –1
–2
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–40 V
V
GS
(V)
0
0
500
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
PW = 2 µs, duty < 1 %
Switching Time t (ns)
200
100
50
20
10
5
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
–20
–4
Drain to Source Voltage
–40
V
DS
V
DD
= –10 V
–25 V
–40 V
–8
Gate to Source Voltage
t d(off)
tf
–60
–12
V
GS
–80
–16
–20
20
t d(on)
tr
–100
0
4
9
12
16
Gate Charge Qg (nc)
Drain Current
I
D
(A)
5